Formation of highlyn‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide
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چکیده
منابع مشابه
suppression of coke formation in thermal cracking by coke inhibitors
the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...
15 صفحه اولPhotoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition
Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition
متن کاملGallium Arsenide - Based Readout Electronics
The readout of detector arrays requires the monolithic or hybrid integration of a integrate circuit multiplexer with the detector array. In most LWIR and VLWIR applications, a hybrid approach is used. For example, the detector array may be built from HgCdTe and the readout integrated circuit may be silicon CMOS [1]. The two integrated circuits are mated through a bump-bonding process in which e...
متن کاملGALLIUM ARSENIDE 1. Exposure Data
1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...
متن کاملGALLIUM ARSENIDE 1. Exposure Data
1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1991
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.104361